Transistor Type: NPN
Max. Collector Current (IC): 150mA
Max. Collector-Emitter Voltage (VCE): 50V
Max. Collector-Base Voltage (VCB): 60V
Max. Emitter Base Voltage (VEBO): 5V
Power Dissipation: 400mW
Max. Transition Frequency: 80MHz
Minimum and Maximum DC Current Gain (hFE): 70-700
Operating Temperature: -55°C to 150°C