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Description :
This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.
Specification :
- The 2N2222 is a bipolar NPN transistor with a maximum collector current (Ic) of 800mA, a maximum collector-base voltage (Vcb) of 75V, and a maximum collector-emitter voltage (Vce) of 40V.
- It has a typical gain (hFE) of 100, although the actual value can range from 35 to 300 depending on the specific transistor.
- The 2N2222 has a typical base-emitter voltage (Vbe) of 0.6V and a maximum power dissipation of 500mW.
- The transistor is housed in a TO-18 metal can package, which is commonly used for high-frequency applications.
- The pinout configuration for the 2N2222 is as follows:
- Collector (C) is connected to the metal case
- Base (B) is the pin opposite the flat side of the transistor
- Emitter (E) is connected to the metal tab that protrudes from the bottom of the transistor